AlGaAs hot-electron optical modulator

B. S. Ryvkin, A. C. Walker, E. A. Avrutin

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1 Citation (Scopus)

Abstract

We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages <1 V and switching times of units of picoseconds. © 2000 American Institute of Physics.

Original languageEnglish
Pages (from-to)2060-2062
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number13
Publication statusPublished - 25 Sep 2000

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    Ryvkin, B. S., Walker, A. C., & Avrutin, E. A. (2000). AlGaAs hot-electron optical modulator. Applied Physics Letters, 77(13), 2060-2062.