AlGaAs hot-electron optical modulator

B. S. Ryvkin, A. C. Walker, E. A. Avrutin

Research output: Contribution to journalArticle

Abstract

We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages <1 V and switching times of units of picoseconds. © 2000 American Institute of Physics.

Original languageEnglish
Pages (from-to)2060-2062
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number13
Publication statusPublished - 25 Sep 2000

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optical interconnects
hot electrons
valleys
aluminum gallium arsenides
photometers
modulators
conduction bands
modulation
physics
heating
electric potential
silicon
electrons

Cite this

Ryvkin, B. S., Walker, A. C., & Avrutin, E. A. (2000). AlGaAs hot-electron optical modulator. Applied Physics Letters, 77(13), 2060-2062.
Ryvkin, B. S. ; Walker, A. C. ; Avrutin, E. A. / AlGaAs hot-electron optical modulator. In: Applied Physics Letters. 2000 ; Vol. 77, No. 13. pp. 2060-2062.
@article{f370228464cf4459890486c9a4d3371c,
title = "AlGaAs hot-electron optical modulator",
abstract = "We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages <1 V and switching times of units of picoseconds. {\circledC} 2000 American Institute of Physics.",
author = "Ryvkin, {B. S.} and Walker, {A. C.} and Avrutin, {E. A.}",
year = "2000",
month = "9",
day = "25",
language = "English",
volume = "77",
pages = "2060--2062",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

Ryvkin, BS, Walker, AC & Avrutin, EA 2000, 'AlGaAs hot-electron optical modulator', Applied Physics Letters, vol. 77, no. 13, pp. 2060-2062.

AlGaAs hot-electron optical modulator. / Ryvkin, B. S.; Walker, A. C.; Avrutin, E. A.

In: Applied Physics Letters, Vol. 77, No. 13, 25.09.2000, p. 2060-2062.

Research output: Contribution to journalArticle

TY - JOUR

T1 - AlGaAs hot-electron optical modulator

AU - Ryvkin, B. S.

AU - Walker, A. C.

AU - Avrutin, E. A.

PY - 2000/9/25

Y1 - 2000/9/25

N2 - We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages <1 V and switching times of units of picoseconds. © 2000 American Institute of Physics.

AB - We propose and analyze a promising surface-normal optical modulator for use in optical interconnects. The device is based on n-AlGaAs materials, operating with red light, and is therefore fully compatible with silicon photodetectors. The operation principle is based on current-induced electron heating, with redistribution of carriers between conduction band valleys playing a significant part. Calculations predict efficient absorption modulation with operating voltages <1 V and switching times of units of picoseconds. © 2000 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=0009544448&partnerID=8YFLogxK

M3 - Article

VL - 77

SP - 2060

EP - 2062

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -

Ryvkin BS, Walker AC, Avrutin EA. AlGaAs hot-electron optical modulator. Applied Physics Letters. 2000 Sep 25;77(13):2060-2062.