Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

Xin Yi; Zoë Greener; Fiona Fleming; Jarosław Kirdoda; Derek C. S. Dumas; Lisa Saalbach; Dave A. S. Muir; Lourdes Ferre-Llin; Ross W. Millar; Douglas J. Paul; Gerald Stuart Buller

doi:10.1109/LPT.2023.3289653

Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

Xin Yi, Zoë Greener, Fiona Fleming, Jarosław Kirdoda, Derek C. S. Dumas, Lisa Saalbach, Dave A. S. Muir, Lourdes Ferre-Llin, Ross W. Millar, Douglas J. Paul, Gerald Stuart Buller

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

229 Downloads (Pure)

Abstract

In this letter, we investigate afterpulsing in 26 and 100 μm diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of 200 μs and temperature of 78 K, and 130 μs at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 μm. We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system.

Original language	English
Pages (from-to)	959-962
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	35
Issue number	17
Early online date	26 Jun 2023
DOIs	https://doi.org/10.1109/LPT.2023.3289653
Publication status	Published - 1 Sept 2023

Keywords

Delays
Detectors
Ge-on-Si
Logic gates
Plasma temperature
Single-photon avalanche diode
Single-photon avalanche diodes
Temperature distribution
Temperature measurement
afterpulsing
photon counting
short-wave infrared
time-correlated single-photon counting

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2023.3289653

Download pdfAccepted author manuscript, 578 KBLicence: CC BY

Cite this

@article{bedd5c2536c7492eb73eb6dc7e262783,

title = "Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes",

abstract = "In this letter, we investigate afterpulsing in 26 and 100 μm diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of 200 μs and temperature of 78 K, and 130 μs at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 μm. We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system.",

keywords = "Delays, Detectors, Ge-on-Si, Logic gates, Plasma temperature, Single-photon avalanche diode, Single-photon avalanche diodes, Temperature distribution, Temperature measurement, afterpulsing, photon counting, short-wave infrared, time-correlated single-photon counting",

author = "Xin Yi and Zo{\"e} Greener and Fiona Fleming and Jaros{\l}aw Kirdoda and Dumas, {Derek C. S.} and Lisa Saalbach and Muir, {Dave A. S.} and Lourdes Ferre-Llin and Millar, {Ross W.} and Paul, {Douglas J.} and Buller, {Gerald Stuart}",

note = "Funding Information: This work was supported in part by the Royal Academy of Engineering under Grant RF-201819-18-187 and Grant CiET2021_123; in part by the Innovate U.K. under Grant 17706 and Grant 44835; in part by the Defence Science and Technology Laboratory under Grant DSTLX-1000092774; and in part by the Engineering and Physical Sciences Research Council under Grant EP/N003446/1, Grant EP/S026428/1, Grant EPN003225/1, Grant EP/T001011/1, and Grant EP/T00097X/1. Publisher Copyright: {\textcopyright} 1989-2012 IEEE.",

year = "2023",

month = sep,

day = "1",

doi = "10.1109/LPT.2023.3289653",

language = "English",

volume = "35",

pages = "959--962",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

number = "17",

}

TY - JOUR

T1 - Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

AU - Yi, Xin

AU - Greener, Zoë

AU - Fleming, Fiona

AU - Kirdoda, Jarosław

AU - Dumas, Derek C. S.

AU - Saalbach, Lisa

AU - Muir, Dave A. S.

AU - Ferre-Llin, Lourdes

AU - Millar, Ross W.

AU - Paul, Douglas J.

AU - Buller, Gerald Stuart

N1 - Funding Information: This work was supported in part by the Royal Academy of Engineering under Grant RF-201819-18-187 and Grant CiET2021_123; in part by the Innovate U.K. under Grant 17706 and Grant 44835; in part by the Defence Science and Technology Laboratory under Grant DSTLX-1000092774; and in part by the Engineering and Physical Sciences Research Council under Grant EP/N003446/1, Grant EP/S026428/1, Grant EPN003225/1, Grant EP/T001011/1, and Grant EP/T00097X/1. Publisher Copyright: © 1989-2012 IEEE.

PY - 2023/9/1

Y1 - 2023/9/1

N2 - In this letter, we investigate afterpulsing in 26 and 100 μm diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of 200 μs and temperature of 78 K, and 130 μs at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 μm. We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system.

AB - In this letter, we investigate afterpulsing in 26 and 100 μm diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of 200 μs and temperature of 78 K, and 130 μs at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 μm. We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system.

KW - Delays

KW - Detectors

KW - Ge-on-Si

KW - Logic gates

KW - Plasma temperature

KW - Single-photon avalanche diode

KW - Single-photon avalanche diodes

KW - Temperature distribution

KW - Temperature measurement

KW - afterpulsing

KW - photon counting

KW - short-wave infrared

KW - time-correlated single-photon counting

UR - http://www.scopus.com/inward/record.url?scp=85163793983&partnerID=8YFLogxK

U2 - 10.1109/LPT.2023.3289653

DO - 10.1109/LPT.2023.3289653

M3 - Article

SN - 1041-1135

VL - 35

SP - 959

EP - 962

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 17

ER -

Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this