Abstract
ZnSe layers grown by molecular beam epitaxy (MBE), after processing by epitaxial lift-off, have been analyzed using fracture mechanics and thin-film interference to determine their adhesion properties on two different substrates, viz. ZnSe and glass, yielding adhesion energy of 270 ± 60 mJ m−2 and 34 ± 4 mJ m−2, respectively. These values are considerably larger than if only van der Waals forces were present and imply that adhesion arises from chemical bonding.
Original language | English |
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Pages (from-to) | 4394-4398 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 47 |
Issue number | 8 |
Early online date | 22 May 2018 |
DOIs | |
Publication status | Published - Aug 2018 |
Keywords
- bonding energy
- Epitaxial lift-off
- II–VI
- Se cap
- stacking
- van der Waals
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry