Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe

N. Mavridi, Jingxuan Zhu, Nirosh Meckamalil Eldose, Kevin Alan Prior, Richard T. Moug

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ZnSe layers grown by molecular beam epitaxy (MBE), after processing by epitaxial lift-off, have been analyzed using fracture mechanics and thin-film interference to determine their adhesion properties on two different substrates, viz. ZnSe and glass, yielding adhesion energy of 270 ± 60 mJ m−2 and 34 ± 4 mJ m−2, respectively. These values are considerably larger than if only van der Waals forces were present and imply that adhesion arises from chemical bonding.

Original languageEnglish
Pages (from-to)4394-4398
Number of pages5
JournalJournal of Electronic Materials
Issue number8
Early online date22 May 2018
Publication statusPublished - Aug 2018


  • bonding energy
  • Epitaxial lift-off
  • II–VI
  • Se cap
  • stacking
  • van der Waals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Mavridi, N., Zhu, J., Meckamalil Eldose, N., Prior, K. A., & Moug, R. T. (2018). Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe. Journal of Electronic Materials, 47(8), 4394-4398.