Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe

N. Mavridi*, Jingxuan Zhu, Nirosh Meckamalil Eldose, Kevin Alan Prior, Richard T. Moug

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)
48 Downloads (Pure)


ZnSe layers grown by molecular beam epitaxy (MBE), after processing by epitaxial lift-off, have been analyzed using fracture mechanics and thin-film interference to determine their adhesion properties on two different substrates, viz. ZnSe and glass, yielding adhesion energy of 270 ± 60 mJ m−2 and 34 ± 4 mJ m−2, respectively. These values are considerably larger than if only van der Waals forces were present and imply that adhesion arises from chemical bonding.

Original languageEnglish
Pages (from-to)4394-4398
Number of pages5
JournalJournal of Electronic Materials
Issue number8
Early online date22 May 2018
Publication statusPublished - Aug 2018


  • bonding energy
  • Epitaxial lift-off
  • II–VI
  • Se cap
  • stacking
  • van der Waals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Adhesion Measurements of Epitaxially Lifted MBE-Grown ZnSe'. Together they form a unique fingerprint.

Cite this