For a temperature-dependent absorption appropriate to a thermally shifting semiconductor band-edge at low temperatures, or to a broadening Urbach tail at high temperatures, the criteria for pure absorptive bistability are shown to be (i) a0L <0.18 (independent of the thermal coefficients) and (ii) AI0>2.7 T0. L is the sample thickness, a0 the initial absorption coefficient, A is a thermal constant, T0 is the temperature coefficient of the absorption and I0 is the incident irradiance. Observation of absorption switching and of purely absorptive bistability under such conditions is reported for InSb near 77 K. © 1984.
|Number of pages||6|
|Publication status||Published - 15 Dec 1984|