Absorption of infrared radiation in silicon

I. W. Boyd, T. D. Binnie, J. I B Wilson, M. J. Colles

Research output: Contribution to journalArticle

Abstract

The absorption of 9-11 µm radiation by thin wafers of lightly doped, n-type Si has been measured at several lattice temperatures from 300 to 800 K. The temperature dependence of the absorption coefficient at ?=10.6 µm is extracted from the data and compared with previous measurements and also with recent theoretical models. A novel processing technique is described in which coupling of the CO2 laser radiation to the Si lattice is significantly enhanced by the simultaneous absorption of radiation from an argon laser.

Original languageEnglish
Pages (from-to)3061-3063
Number of pages3
JournalJournal of Applied Physics
Volume55
Issue number8
DOIs
Publication statusPublished - 1984

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    Boyd, I. W., Binnie, T. D., Wilson, J. I. B., & Colles, M. J. (1984). Absorption of infrared radiation in silicon. Journal of Applied Physics, 55(8), 3061-3063. https://doi.org/10.1063/1.333300