A thermal isolation technique using through-silicon vias for three-dimensional ICs

Sanming Hu; Yen Yi Germaine Hoe; Hongyu Li; Dan Zhao; Jinglin Shi; Yong Han; Keng Hwa Teo; Yong Zhong Xiong; Jin He; Xiaowu Zhang; Minkyu Je; Mohammad Madihian

doi:10.1109/TED.2013.2243452

A thermal isolation technique using through-silicon vias for three-dimensional ICs

Sanming Hu^*, Yen Yi Germaine Hoe, Hongyu Li, Dan Zhao, Jinglin Shi, Yong Han, Keng Hwa Teo, Yong Zhong Xiong, Jin He, Xiaowu Zhang, Minkyu Je, Mohammad Madihian

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

This brief proposes a guard ring using throughsilicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions. The results show that, without affecting the inherent electrical performance of the RO, the designed TSV ring shields the RO from high-temperature environments. The oscillation frequency shifting is mitigated from 5.96 MHz without TSV to 2.11 MHz with the proposed TSV ring. This TSV-based structure provides a good option to alleviate thermal coupling in a highly integrated 3-D IC.

Original language	English
Pages (from-to)	1282-1287
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	3
DOIs	https://doi.org/10.1109/TED.2013.2243452
Publication status	Published - Mar 2013

Keywords

Guard ring
ring oscillator (RO)
thermal isolation
through-silicon via (TSV)
three-dimensional integrated circuit (3-D IC)
TEMPERATURE COMPENSATION

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10.1109/TED.2013.2243452

Cite this

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title = "A thermal isolation technique using through-silicon vias for three-dimensional ICs",

abstract = "This brief proposes a guard ring using throughsilicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions. The results show that, without affecting the inherent electrical performance of the RO, the designed TSV ring shields the RO from high-temperature environments. The oscillation frequency shifting is mitigated from 5.96 MHz without TSV to 2.11 MHz with the proposed TSV ring. This TSV-based structure provides a good option to alleviate thermal coupling in a highly integrated 3-D IC.",

keywords = "Guard ring, ring oscillator (RO), thermal isolation, through-silicon via (TSV), three-dimensional integrated circuit (3-D IC), TEMPERATURE COMPENSATION",

author = "Sanming Hu and Hoe, {Yen Yi Germaine} and Hongyu Li and Dan Zhao and Jinglin Shi and Yong Han and Teo, {Keng Hwa} and Xiong, {Yong Zhong} and Jin He and Xiaowu Zhang and Minkyu Je and Mohammad Madihian",

year = "2013",

month = mar,

doi = "10.1109/TED.2013.2243452",

language = "English",

volume = "60",

pages = "1282--1287",

journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - A thermal isolation technique using through-silicon vias for three-dimensional ICs

AU - Hu, Sanming

AU - Hoe, Yen Yi Germaine

AU - Li, Hongyu

AU - Zhao, Dan

AU - Shi, Jinglin

AU - Han, Yong

AU - Teo, Keng Hwa

AU - Xiong, Yong Zhong

AU - He, Jin

AU - Zhang, Xiaowu

AU - Je, Minkyu

AU - Madihian, Mohammad

PY - 2013/3

Y1 - 2013/3

N2 - This brief proposes a guard ring using throughsilicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions. The results show that, without affecting the inherent electrical performance of the RO, the designed TSV ring shields the RO from high-temperature environments. The oscillation frequency shifting is mitigated from 5.96 MHz without TSV to 2.11 MHz with the proposed TSV ring. This TSV-based structure provides a good option to alleviate thermal coupling in a highly integrated 3-D IC.

AB - This brief proposes a guard ring using throughsilicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions. The results show that, without affecting the inherent electrical performance of the RO, the designed TSV ring shields the RO from high-temperature environments. The oscillation frequency shifting is mitigated from 5.96 MHz without TSV to 2.11 MHz with the proposed TSV ring. This TSV-based structure provides a good option to alleviate thermal coupling in a highly integrated 3-D IC.

KW - Guard ring

KW - ring oscillator (RO)

KW - thermal isolation

KW - through-silicon via (TSV)

KW - three-dimensional integrated circuit (3-D IC)

KW - TEMPERATURE COMPENSATION

U2 - 10.1109/TED.2013.2243452

DO - 10.1109/TED.2013.2243452

M3 - Article

SN - 0018-9383

VL - 60

SP - 1282

EP - 1287

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

A thermal isolation technique using through-silicon vias for three-dimensional ICs

Abstract

Keywords

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