A thermal isolation technique using through-silicon vias for three-dimensional ICs

Sanming Hu*, Yen Yi Germaine Hoe, Hongyu Li, Dan Zhao, Jinglin Shi, Yong Han, Keng Hwa Teo, Yong Zhong Xiong, Jin He, Xiaowu Zhang, Minkyu Je, Mohammad Madihian

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


This brief proposes a guard ring using throughsilicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions. The results show that, without affecting the inherent electrical performance of the RO, the designed TSV ring shields the RO from high-temperature environments. The oscillation frequency shifting is mitigated from 5.96 MHz without TSV to 2.11 MHz with the proposed TSV ring. This TSV-based structure provides a good option to alleviate thermal coupling in a highly integrated 3-D IC.

Original languageEnglish
Pages (from-to)1282-1287
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - Mar 2013


  • Guard ring
  • ring oscillator (RO)
  • thermal isolation
  • through-silicon via (TSV)
  • three-dimensional integrated circuit (3-D IC)


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