A thermal isolation technique using through-silicon vias for three-dimensional ICs

Sanming Hu, Yen Yi Germaine Hoe, Hongyu Li, Dan Zhao, Jinglin Shi, Yong Han, Keng Hwa Teo, Yong Zhong Xiong, Jin He, Xiaowu Zhang, Minkyu Je, Mohammad Madihian

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This brief proposes a guard ring using throughsilicon vias (TSVs) to isolate thermal coupling in a 3-D integrated circuit (3-D IC). To verify this idea, simulation and measurement are carried out. A ring oscillator (RO) is implemented in a 65-nm CMOS and then measured in four different conditions. The results show that, without affecting the inherent electrical performance of the RO, the designed TSV ring shields the RO from high-temperature environments. The oscillation frequency shifting is mitigated from 5.96 MHz without TSV to 2.11 MHz with the proposed TSV ring. This TSV-based structure provides a good option to alleviate thermal coupling in a highly integrated 3-D IC.

Original languageEnglish
Pages (from-to)1282-1287
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number3
DOIs
Publication statusPublished - Mar 2013

Keywords

  • Guard ring
  • ring oscillator (RO)
  • thermal isolation
  • through-silicon via (TSV)
  • three-dimensional integrated circuit (3-D IC)
  • TEMPERATURE COMPENSATION

Cite this

Hu, S., Hoe, Y. Y. G., Li, H., Zhao, D., Shi, J., Han, Y., Teo, K. H., Xiong, Y. Z., He, J., Zhang, X., Je, M., & Madihian, M. (2013). A thermal isolation technique using through-silicon vias for three-dimensional ICs. IEEE Transactions on Electron Devices, 60(3), 1282-1287. https://doi.org/10.1109/TED.2013.2243452