A study of thin silicon dioxide films using infrared absorption techniques

I. W. Boyd, J. I B Wilson

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169 Citations (Scopus)


Infrared transmission spectra of a series of silicon dioxide (SiO 2) films grown on silicon wafers from a HCl and O2 gas mixture at 850°C, have been studied for film thicknesses down to 28 Å. The validity of Lambert-Bouguer's Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm-1 is in good agreement with previously published data for thicker, vapor-deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm-1 has been found, moving from an asymptotic limit maximum of ~1070 cm-1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.

Original languageEnglish
Pages (from-to)4166-4172
Number of pages7
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 1982


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