A study of thin silicon dioxide films using infrared absorption techniques

I. W. Boyd; J. I B Wilson

doi:10.1063/1.331239

A study of thin silicon dioxide films using infrared absorption techniques

I. W. Boyd, J. I B Wilson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

174 Citations (Scopus)

Abstract

Infrared transmission spectra of a series of silicon dioxide (SiO ₂) films grown on silicon wafers from a HCl and O₂ gas mixture at 850°C, have been studied for film thicknesses down to 28 Å. The validity of Lambert-Bouguer's Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm^-1 is in good agreement with previously published data for thicker, vapor-deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm^-1 has been found, moving from an asymptotic limit maximum of ~1070 cm^-1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.

Original language	English
Pages (from-to)	4166-4172
Number of pages	7
Journal	Journal of Applied Physics
Volume	53
Issue number	6
DOIs	https://doi.org/10.1063/1.331239
Publication status	Published - 1982

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@article{4daf19ff75df4c5ab4c3878983f5dbf0,

title = "A study of thin silicon dioxide films using infrared absorption techniques",

abstract = "Infrared transmission spectra of a series of silicon dioxide (SiO 2) films grown on silicon wafers from a HCl and O2 gas mixture at 850°C, have been studied for film thicknesses down to 28 {\AA}. The validity of Lambert-Bouguer's Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm-1 is in good agreement with previously published data for thicker, vapor-deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm-1 has been found, moving from an asymptotic limit maximum of ~1070 cm-1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.",

author = "Boyd, {I. W.} and Wilson, {J. I B}",

year = "1982",

doi = "10.1063/1.331239",

language = "English",

volume = "53",

pages = "4166--4172",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - A study of thin silicon dioxide films using infrared absorption techniques

AU - Boyd, I. W.

AU - Wilson, J. I B

PY - 1982

Y1 - 1982

N2 - Infrared transmission spectra of a series of silicon dioxide (SiO 2) films grown on silicon wafers from a HCl and O2 gas mixture at 850°C, have been studied for film thicknesses down to 28 Å. The validity of Lambert-Bouguer's Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm-1 is in good agreement with previously published data for thicker, vapor-deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm-1 has been found, moving from an asymptotic limit maximum of ~1070 cm-1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.

AB - Infrared transmission spectra of a series of silicon dioxide (SiO 2) films grown on silicon wafers from a HCl and O2 gas mixture at 850°C, have been studied for film thicknesses down to 28 Å. The validity of Lambert-Bouguer's Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm-1 is in good agreement with previously published data for thicker, vapor-deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm-1 has been found, moving from an asymptotic limit maximum of ~1070 cm-1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0020140825&partnerID=8YFLogxK

U2 - 10.1063/1.331239

DO - 10.1063/1.331239

M3 - Article

SN - 0021-8979

VL - 53

SP - 4166

EP - 4172

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

A study of thin silicon dioxide films using infrared absorption techniques

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