In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn0.25Cd0.75Se/ZnSe single quantum well structures grown by molecular beam epitaxy. In the temperature range 70-500 K, the iodine-doped material shows evidence of the trapping and re-emission of carriers from three deep acceptor levels at 80, 120, and 350 meV above the valence band. Recombination in the quantum well material is dominated by radiative processes for temperatures < 100 K, whilst at room temperature measurements indicate that the non-radiative processes are considerably worse than in bulk material.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - Feb 1996|