A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy

J. S. Massa; G. S. Buller; A. C. Walker; J. Simpson; G. Horsburgh; J. T. Mullins; K. A. Prior; B. C. Cavenett

A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, G. Horsburgh, J. T. Mullins, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn_0.25Cd_0.75Se/ZnSe single quantum well structures grown by molecular beam epitaxy. In the temperature range 70-500 K, the iodine-doped material shows evidence of the trapping and re-emission of carriers from three deep acceptor levels at 80, 120, and 350 meV above the valence band. Recombination in the quantum well material is dominated by radiative processes for temperatures < 100 K, whilst at room temperature measurements indicate that the non-radiative processes are considerably worse than in bulk material.

Original language	English
Pages (from-to)	402-405
Number of pages	4
Journal	Journal of Crystal Growth
Volume	159
Issue number	1-4
Publication status	Published - Feb 1996

Cite this

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title = "A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy",

abstract = "In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn0.25Cd0.75Se/ZnSe single quantum well structures grown by molecular beam epitaxy. In the temperature range 70-500 K, the iodine-doped material shows evidence of the trapping and re-emission of carriers from three deep acceptor levels at 80, 120, and 350 meV above the valence band. Recombination in the quantum well material is dominated by radiative processes for temperatures < 100 K, whilst at room temperature measurements indicate that the non-radiative processes are considerably worse than in bulk material.",

author = "Massa, {J. S.} and Buller, {G. S.} and Walker, {A. C.} and J. Simpson and G. Horsburgh and Mullins, {J. T.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1996",

month = feb,

language = "English",

volume = "159",

pages = "402--405",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy

AU - Massa, J. S.

AU - Buller, G. S.

AU - Walker, A. C.

AU - Simpson, J.

AU - Horsburgh, G.

AU - Mullins, J. T.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1996/2

Y1 - 1996/2

N2 - In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn0.25Cd0.75Se/ZnSe single quantum well structures grown by molecular beam epitaxy. In the temperature range 70-500 K, the iodine-doped material shows evidence of the trapping and re-emission of carriers from three deep acceptor levels at 80, 120, and 350 meV above the valence band. Recombination in the quantum well material is dominated by radiative processes for temperatures < 100 K, whilst at room temperature measurements indicate that the non-radiative processes are considerably worse than in bulk material.

AB - In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn0.25Cd0.75Se/ZnSe single quantum well structures grown by molecular beam epitaxy. In the temperature range 70-500 K, the iodine-doped material shows evidence of the trapping and re-emission of carriers from three deep acceptor levels at 80, 120, and 350 meV above the valence band. Recombination in the quantum well material is dominated by radiative processes for temperatures < 100 K, whilst at room temperature measurements indicate that the non-radiative processes are considerably worse than in bulk material.

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M3 - Article

SN - 0022-0248

VL - 159

SP - 402

EP - 405

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy

Abstract

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