A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy

J. S. Massa, G. S. Buller, A. C. Walker, J. Simpson, G. Horsburgh, J. T. Mullins, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn0.25Cd0.75Se/ZnSe single quantum well structures grown by molecular beam epitaxy. In the temperature range 70-500 K, the iodine-doped material shows evidence of the trapping and re-emission of carriers from three deep acceptor levels at 80, 120, and 350 meV above the valence band. Recombination in the quantum well material is dominated by radiative processes for temperatures < 100 K, whilst at room temperature measurements indicate that the non-radiative processes are considerably worse than in bulk material.

Original languageEnglish
Pages (from-to)402-405
Number of pages4
JournalJournal of Crystal Growth
Volume159
Issue number1-4
Publication statusPublished - Feb 1996

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    Massa, J. S., Buller, G. S., Walker, A. C., Simpson, J., Horsburgh, G., Mullins, J. T., Prior, K. A., & Cavenett, B. C. (1996). A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy. Journal of Crystal Growth, 159(1-4), 402-405.