A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling

Amr Saher Helmy; N. P. Johnson; M. L. Ke; A. Catrina Bryce; J. Stewart Aitchison; John H. Marsh; Ivair Gontijo; Gerald S. Buller; J. Davidson; P. Dawson

doi:10.1109/2944.720477

A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling

Amr Saher Helmy, N. P. Johnson, M. L. Ke, A. Catrina Bryce, J. Stewart Aitchison, John H. Marsh, Ivair Gontijo, Gerald S. Buller, J. Davidson, P. Dawson

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A study of the parameters of the process of impurityfree vacancy disordering (IFVD) of GaAs-AlGaAs quantum-well structures is presented. The study includes photoluminescence excitation measurements which show that the as-grown barrier/well interface is better fitted by an exponential profile than a square profile. This has a significant effect on the intermixed diffusion profiles. Also, deep level transient spectroscopy measurements have been conducted on samples that were processed using IFVD. The measurements show an elevated concentration of the trap EL2 in the processed samples, which is known to be related to As antisites. The concentration of such defects agrees with the concentration calculated for IFVD to within an order of magnitude, suggesting a correlation between the point defects required for IFVD and EL2. Finally, temporally and spatially resolved photoluminescence measurements were conducted on processed samples which indicate a factor of 3 reduction in the photogenerated carrier life time after undergoing IFVD. A spatial resolution better than 3 µm has been observed.

Original language	English
Pages (from-to)	661-668
Number of pages	8
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	4
Issue number	4
DOIs	https://doi.org/10.1109/2944.720477
Publication status	Published - Jul 1998

Keywords

Diffusion processes
Optical spectroscopy
Quantum heterostructures
Quantum-well interdiffusion

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10.1109/2944.720477

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@article{b37e26a55dc7480a8dc79f70c50f9c2b,

title = "A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling",

abstract = "A study of the parameters of the process of impurityfree vacancy disordering (IFVD) of GaAs-AlGaAs quantum-well structures is presented. The study includes photoluminescence excitation measurements which show that the as-grown barrier/well interface is better fitted by an exponential profile than a square profile. This has a significant effect on the intermixed diffusion profiles. Also, deep level transient spectroscopy measurements have been conducted on samples that were processed using IFVD. The measurements show an elevated concentration of the trap EL2 in the processed samples, which is known to be related to As antisites. The concentration of such defects agrees with the concentration calculated for IFVD to within an order of magnitude, suggesting a correlation between the point defects required for IFVD and EL2. Finally, temporally and spatially resolved photoluminescence measurements were conducted on processed samples which indicate a factor of 3 reduction in the photogenerated carrier life time after undergoing IFVD. A spatial resolution better than 3 µm has been observed.",

keywords = "Diffusion processes, Optical spectroscopy, Quantum heterostructures, Quantum-well interdiffusion",

author = "{Saher Helmy}, Amr and Johnson, {N. P.} and Ke, {M. L.} and Bryce, {A. Catrina} and Aitchison, {J. Stewart} and Marsh, {John H.} and Ivair Gontijo and Buller, {Gerald S.} and J. Davidson and P. Dawson",

year = "1998",

month = jul,

doi = "10.1109/2944.720477",

language = "English",

volume = "4",

pages = "661--668",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "IEEE",

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T1 - A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling

AU - Saher Helmy, Amr

AU - Johnson, N. P.

AU - Ke, M. L.

AU - Bryce, A. Catrina

AU - Aitchison, J. Stewart

AU - Marsh, John H.

AU - Gontijo, Ivair

AU - Buller, Gerald S.

AU - Davidson, J.

AU - Dawson, P.

PY - 1998/7

Y1 - 1998/7

N2 - A study of the parameters of the process of impurityfree vacancy disordering (IFVD) of GaAs-AlGaAs quantum-well structures is presented. The study includes photoluminescence excitation measurements which show that the as-grown barrier/well interface is better fitted by an exponential profile than a square profile. This has a significant effect on the intermixed diffusion profiles. Also, deep level transient spectroscopy measurements have been conducted on samples that were processed using IFVD. The measurements show an elevated concentration of the trap EL2 in the processed samples, which is known to be related to As antisites. The concentration of such defects agrees with the concentration calculated for IFVD to within an order of magnitude, suggesting a correlation between the point defects required for IFVD and EL2. Finally, temporally and spatially resolved photoluminescence measurements were conducted on processed samples which indicate a factor of 3 reduction in the photogenerated carrier life time after undergoing IFVD. A spatial resolution better than 3 µm has been observed.

AB - A study of the parameters of the process of impurityfree vacancy disordering (IFVD) of GaAs-AlGaAs quantum-well structures is presented. The study includes photoluminescence excitation measurements which show that the as-grown barrier/well interface is better fitted by an exponential profile than a square profile. This has a significant effect on the intermixed diffusion profiles. Also, deep level transient spectroscopy measurements have been conducted on samples that were processed using IFVD. The measurements show an elevated concentration of the trap EL2 in the processed samples, which is known to be related to As antisites. The concentration of such defects agrees with the concentration calculated for IFVD to within an order of magnitude, suggesting a correlation between the point defects required for IFVD and EL2. Finally, temporally and spatially resolved photoluminescence measurements were conducted on processed samples which indicate a factor of 3 reduction in the photogenerated carrier life time after undergoing IFVD. A spatial resolution better than 3 µm has been observed.

KW - Diffusion processes

KW - Optical spectroscopy

KW - Quantum heterostructures

KW - Quantum-well interdiffusion

U2 - 10.1109/2944.720477

DO - 10.1109/2944.720477

M3 - Article

SN - 1077-260X

VL - 4

SP - 661

EP - 668

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 4

ER -

A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modeling

Abstract

Keywords

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