A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling

A S Helmy, N P Johnson, M I Ke, A C Bryce, J S Aitchisogn, J H Marsh, I Gontijo, Gerald Stuart Buller, J Davidson, P Dawson

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)661-668
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume4
Issue number4
Publication statusPublished - 1998

Cite this

Helmy, A. S., Johnson, N. P., Ke, M. I., Bryce, A. C., Aitchisogn, J. S., Marsh, J. H., ... Dawson, P. (1998). A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling. IEEE Journal of Selected Topics in Quantum Electronics, 4(4), 661-668.
Helmy, A S ; Johnson, N P ; Ke, M I ; Bryce, A C ; Aitchisogn, J S ; Marsh, J H ; Gontijo, I ; Buller, Gerald Stuart ; Davidson, J ; Dawson, P. / A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling. In: IEEE Journal of Selected Topics in Quantum Electronics. 1998 ; Vol. 4, No. 4. pp. 661-668.
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Helmy, AS, Johnson, NP, Ke, MI, Bryce, AC, Aitchisogn, JS, Marsh, JH, Gontijo, I, Buller, GS, Davidson, J & Dawson, P 1998, 'A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling', IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, no. 4, pp. 661-668.

A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling. / Helmy, A S; Johnson, N P; Ke, M I; Bryce, A C; Aitchisogn, J S; Marsh, J H; Gontijo, I; Buller, Gerald Stuart; Davidson, J; Dawson, P.

In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 4, No. 4, 1998, p. 661-668.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling

AU - Helmy, A S

AU - Johnson, N P

AU - Ke, M I

AU - Bryce, A C

AU - Aitchisogn, J S

AU - Marsh, J H

AU - Gontijo, I

AU - Buller, Gerald Stuart

AU - Davidson, J

AU - Dawson, P

PY - 1998

Y1 - 1998

M3 - Article

VL - 4

SP - 661

EP - 668

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 4

ER -

Helmy AS, Johnson NP, Ke MI, Bryce AC, Aitchisogn JS, Marsh JH et al. A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling. IEEE Journal of Selected Topics in Quantum Electronics. 1998;4(4):661-668.