A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling

A S Helmy, N P Johnson, M I Ke, A C Bryce, J S Aitchisogn, J H Marsh, I Gontijo, Gerald Stuart Buller, J Davidson, P Dawson

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)661-668
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume4
Issue number4
Publication statusPublished - 1998

Cite this

Helmy, A. S., Johnson, N. P., Ke, M. I., Bryce, A. C., Aitchisogn, J. S., Marsh, J. H., Gontijo, I., Buller, G. S., Davidson, J., & Dawson, P. (1998). A study of impurity-free vacancy disordering in GaAs-AlGaAs for improved modelling. IEEE Journal of Selected Topics in Quantum Electronics, 4(4), 661-668.