A spectroscopic study of the piezoelectric effect in ZnSe/ZnCdSe single quantum wells grown on (2 1 1)B GaAs

J S Milnes, Christian Morhain, S. A. Telfer, W. Meridith, T. A. Steele, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The piezoelectric effect has been studied in ZnSe/ZnCdSe single quantum wells grown on (211)B GaAs substrates by molecular beam epitaxy. The effect of the internal electric field on the exciton spectra has been investigated using photocurrent and photoluminescence spectroscopy on Schottky structures where an external reverse bias can be applied. The strength of the piezoelectric field has been determined from the flat band condition in each quantum well. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)714-717
Number of pages4
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - 1998

Keywords

  • Photocurrent
  • Photoluminescence
  • Piezoelectric

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