Abstract
This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.
| Original language | English |
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| Pages (from-to) | 806-815 |
| Number of pages | 10 |
| Journal | Semiconductor Science and Technology |
| Volume | 13 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1998 |