A simulation study of high voltage 4H-SiC IGBTs

J. Wang; B. W. Williams

doi:10.1088/0268-1242/13/7/026

A simulation study of high voltage 4H-SiC IGBTs

J. Wang, B. W. Williams

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.

Original language	English
Pages (from-to)	806-815
Number of pages	10
Journal	Semiconductor Science and Technology
Volume	13
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/13/7/026
Publication status	Published - Jul 1998

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@article{b3f38fb5f96f44bcbf4abd12ab59869a,

title = "A simulation study of high voltage 4H-SiC IGBTs",

abstract = "This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.",

author = "J. Wang and Williams, {B. W.}",

year = "1998",

month = jul,

doi = "10.1088/0268-1242/13/7/026",

language = "English",

volume = "13",

pages = "806--815",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing ",

number = "7",

}

TY - JOUR

T1 - A simulation study of high voltage 4H-SiC IGBTs

AU - Wang, J.

AU - Williams, B. W.

PY - 1998/7

Y1 - 1998/7

N2 - This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.

AB - This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.

U2 - 10.1088/0268-1242/13/7/026

DO - 10.1088/0268-1242/13/7/026

M3 - Article

SN - 0268-1242

VL - 13

SP - 806

EP - 815

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

ER -

A simulation study of high voltage 4H-SiC IGBTs

Abstract

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