A simulation study of high voltage 4H-SiC IGBTs

J. Wang, B. W. Williams

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper evaluates the performance of high voltage 4H-SiC IGBTs. The static and dynamic characteristics of SiC IGBTs with various high voltage ratings and structures at different temperatures are obtained by 2D numerical and analytical simulations. Discrepancies in the device performance are investigated. Comparison with silicon IGBTs is also included.

Original languageEnglish
Pages (from-to)806-815
Number of pages10
JournalSemiconductor Science and Technology
Volume13
Issue number7
DOIs
Publication statusPublished - Jul 1998

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