A review of IGBT models

Kuang Sheng, Barry W. Williams, Stephen J. Finney

Research output: Contribution to journalLiterature reviewpeer-review

353 Citations (Scopus)


In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into different categories according to mathematical type, objectives, complexity, accuracy and speed. Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies. Some problems and trends in IGBT modeling are discussed. © 2000 IEEE.

Original languageEnglish
Pages (from-to)1250-1266
Number of pages17
JournalIEEE Transactions on Power Electronics
Issue number6
Publication statusPublished - 2000


  • IGBT
  • Model
  • Review


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