Abstract
The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material.
Cutting hardness was adopted as a quantifier of the machinability of the polytypes of single crystal SiC. 3C-SiC offered highest cutting resistance (similar to 2.9 times that of silicon) followed by the 4H-SiC (similar to 2.8 times that of silicon) whereas 6H-SiC (similar to 2.1 times that of silicon) showed the least. Despite its high cutting resistance, 4H-SiC showed the minimum sub-surface crystal lattice deformed layer depth, in contrast to 6H-SiC. Further analysis of temperatures in the cutting zone and the percentage tool wear indicated that single point diamond turning (SPDT) of single crystal SiC could be limited to either 6H-SiC or 4H-SiC depending upon quality and cost considerations as these were found to be more responsive and amenable to SPDT compared to single crystal 3C-SiC. (c) 2012 Elsevier Ltd. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 3423-3434 |
| Number of pages | 12 |
| Journal | Journal of the European Ceramic Society |
| Volume | 32 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Sept 2012 |
Keywords
- Silicon
- Ductile regime machining
- MATERIAL REMOVAL
- TRANSITION
- MECHANISM
- NANOINDENTATION
- BRITTLENESS
- MOLECULAR-DYNAMICS SIMULATION
- Nanometric cutting
- DIAMOND
- TRANSFORMATION
- SiC
- PRESSURE
- TOUGHNESS
- Tool wear