In this article we present the concept of a practical approach to realization of a fully passive electronically rewritable chipless RFID tag. Integrated non-volatile and solid state Conductive Bridging Random Access Memory (CBRAM) based Metal-Insulator-Metal (MIM) switches are used to realize the rewritable functionality. A solution to the primary challenge of requirement of obtaining very low ON states resistances (~ 100 Ω) of a CBRAM/MIM RF switch. A technique of data encoding in electronically rewritable dipole resonators, by effectively modulating the impedance states of integrated CBRAM/MIM switches is presented herewith in detail. This example is presented through a model design of a 3bit rewritable chipless RFID tag.
|Title of host publication||XXXIIIrd General Assembly and Scientific Symposium of the International Union of Radio Science 2020|
|Publication status||Published - 20 Oct 2020|