A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm

J. M. Smith; P. A. Hiskett; I. Gontijo; L. Purves; G. S. Buller

doi:10.1063/1.1366635

A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm

J. M. Smith, P. A. Hiskett, I. Gontijo, L. Purves, G. S. Buller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides temporal resolution of less than 300 ps (full width at half maximum) and spatial resolution down to 4 µm at a sample temperature between 4 and 300 K. Analysis of noise characteristics indicates the ability to measure the excess carrier lifetimes of semiconductor devices with excited carrier densities of less than 10¹⁴cm^-3. © 2001 American Institute of Physics.

Original language	English
Pages (from-to)	2325-2329
Number of pages	5
Journal	Review of Scientific Instruments
Volume	72
Issue number	5
DOIs	https://doi.org/10.1063/1.1366635
Publication status	Published - 2001

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title = "A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm",

abstract = "We describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides temporal resolution of less than 300 ps (full width at half maximum) and spatial resolution down to 4 µm at a sample temperature between 4 and 300 K. Analysis of noise characteristics indicates the ability to measure the excess carrier lifetimes of semiconductor devices with excited carrier densities of less than 1014cm-3. {\textcopyright} 2001 American Institute of Physics.",

author = "Smith, {J. M.} and Hiskett, {P. A.} and I. Gontijo and L. Purves and Buller, {G. S.}",

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AU - Hiskett, P. A.

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AU - Purves, L.

AU - Buller, G. S.

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N2 - We describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides temporal resolution of less than 300 ps (full width at half maximum) and spatial resolution down to 4 µm at a sample temperature between 4 and 300 K. Analysis of noise characteristics indicates the ability to measure the excess carrier lifetimes of semiconductor devices with excited carrier densities of less than 1014cm-3. © 2001 American Institute of Physics.

AB - We describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides temporal resolution of less than 300 ps (full width at half maximum) and spatial resolution down to 4 µm at a sample temperature between 4 and 300 K. Analysis of noise characteristics indicates the ability to measure the excess carrier lifetimes of semiconductor devices with excited carrier densities of less than 1014cm-3. © 2001 American Institute of Physics.

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JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 5

ER -

A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm

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