INIS
x-ray diffraction
100%
dies
100%
strains
50%
maps
50%
thermal stresses
50%
tools
25%
mapping
25%
laboratories
25%
modeling
25%
surfaces
25%
temperature range 0273-0400 k
25%
failures
25%
width
25%
devices
25%
semiconductor materials
25%
integrated circuits
25%
finite element method
25%
fabrication
25%
manufacturing
25%
silicon
25%
annealing
25%
metrology
25%
thermal expansion
25%
nondestructive analysis
25%
rocking curve
25%
Engineering
Ray Diffraction
100%
Ray Diffraction Technique
100%
Thermal Stress
100%
Dimensional Surface
50%
Integrated Circuit
50%
Elevated Temperature
50%
Coefficient of Thermal Expansion
50%
System-on-Chip
50%
System-in-Package
50%
Surface Modeling
50%
Finite Element Method
50%
Room Temperature
50%
Measure Stress
50%
Material Science
Diffraction Measurement
100%
X-Ray Diffraction
100%
Thermal Stress
66%
Electronic Circuit
33%
Non-Destructive Testing
33%
Finite Element Methods
33%
Silicon
33%
Thermal Expansion
33%
Physics
X Ray Diffraction
100%
Thermal Stress
66%
Warpage
66%
Integrated Circuit
33%
Finite Element Methods
33%
Room Temperature
33%
Thermal Expansion
33%