A new static induction thyristor (SITh) analytical mode

Jue Wang, Barry W. Williams

Research output: Contribution to journalArticle

Abstract

In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.

Original languageEnglish
Pages (from-to)866-876
Number of pages11
JournalIEEE Transactions on Power Electronics
Volume14
Issue number5
Publication statusPublished - 1999

Fingerprint

Thyristors
SPICE
Computer simulation
Experiments
Temperature

Keywords

  • Modeling
  • Power semiconductor devices

Cite this

Wang, Jue ; Williams, Barry W. / A new static induction thyristor (SITh) analytical mode. In: IEEE Transactions on Power Electronics. 1999 ; Vol. 14, No. 5. pp. 866-876.
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Wang, J & Williams, BW 1999, 'A new static induction thyristor (SITh) analytical mode', IEEE Transactions on Power Electronics, vol. 14, no. 5, pp. 866-876.

A new static induction thyristor (SITh) analytical mode. / Wang, Jue; Williams, Barry W.

In: IEEE Transactions on Power Electronics, Vol. 14, No. 5, 1999, p. 866-876.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Wang, Jue

AU - Williams, Barry W.

PY - 1999

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N2 - In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.

AB - In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.

KW - Modeling

KW - Power semiconductor devices

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