Abstract
In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.
| Original language | English |
|---|---|
| Pages (from-to) | 866-876 |
| Number of pages | 11 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 14 |
| Issue number | 5 |
| Publication status | Published - 1999 |
Keywords
- Modeling
- Power semiconductor devices