In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.
|Number of pages||11|
|Journal||IEEE Transactions on Power Electronics|
|Publication status||Published - 1999|
- Power semiconductor devices