Abstract
In this paper, an analytical static induction thyristor (SITh) model is proposed based on device internal physical operating mechanisms. The nonquasi-static model predicts both device static and dynamic characteristics. The model accounts for effects of the device structure, lifetime, and temperature. Implemented in PSPICE as a subcircuit, model simulation results are compared with numerical simulation and experiment results for various electrical and thermal conditions. The model exhibits accurate results, good convergence, and fast simulation speed.
Original language | English |
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Pages (from-to) | 866-876 |
Number of pages | 11 |
Journal | IEEE Transactions on Power Electronics |
Volume | 14 |
Issue number | 5 |
Publication status | Published - 1999 |
Keywords
- Modeling
- Power semiconductor devices