Abstract
A new analytical insulated gate bipolar transistor (IGBT) model for improved on-state characteristics prediction is proposed. Two-dimensional (2-D) effects in the forward conduction of an IGBT are studied analytically. These effects significantly influence the on-state characteristics of the device and must be accounted for when IGBT modeling. Dynamic characteristics and temperature effects are included in the model. Both three-dimensional (3-D) numerical simulation and experimental results support the theoretical analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 98-107 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 14 |
| Issue number | 1 |
| Publication status | Published - 1999 |
Keywords
- IGBT
- Model
- On-state voltage
- Two-dimensional effects