A new analytical IGBT model with improved electrical characteristics

Kuang Sheng, Stephen J. Finney, Barry W. Williams

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

A new analytical insulated gate bipolar transistor (IGBT) model for improved on-state characteristics prediction is proposed. Two-dimensional (2-D) effects in the forward conduction of an IGBT are studied analytically. These effects significantly influence the on-state characteristics of the device and must be accounted for when IGBT modeling. Dynamic characteristics and temperature effects are included in the model. Both three-dimensional (3-D) numerical simulation and experimental results support the theoretical analysis.

Original languageEnglish
Pages (from-to)98-107
Number of pages10
JournalIEEE Transactions on Power Electronics
Volume14
Issue number1
Publication statusPublished - 1999

Keywords

  • IGBT
  • Model
  • On-state voltage
  • Two-dimensional effects

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    Sheng, K., Finney, S. J., & Williams, B. W. (1999). A new analytical IGBT model with improved electrical characteristics. IEEE Transactions on Power Electronics, 14(1), 98-107.