A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1-xSbx alloys

P. J P Tang; M. J. Pullin; Y. B. Li; C. C. Phillips; R. A. Stradling; S. J. Chung; W. T. Yuen; L. Hart; D. J. Bain; I. Galbraith

A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs_1-xSb_x alloys

P. J P Tang, M. J. Pullin, Y. B. Li, C. C. Phillips, R. A. Stradling, S. J. Chung, W. T. Yuen, L. Hart, D. J. Bain, I. Galbraith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

InAs/InAs_0.865Sb_0.135 quantum wells are characterized using magneto-photoluminescence. Band-to-band transitions are found at energies lower than the band gaps of either the InAs or the InAs_0.865Sb_0.135 with photoluminescence emission at wavelengths up to 4.8 µm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs. © 1996 American Institute of Physics.

Original language	English
Pages (from-to)	2501-2503
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	17
Publication status	Published - 21 Oct 1996

Cite this

@article{4e5f4b5f90324e239ea3c87dd3c9c1ab,

title = "A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1-xSbx alloys",

abstract = "InAs/InAs0.865Sb0.135 quantum wells are characterized using magneto-photoluminescence. Band-to-band transitions are found at energies lower than the band gaps of either the InAs or the InAs0.865Sb0.135 with photoluminescence emission at wavelengths up to 4.8 µm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs. {\textcopyright} 1996 American Institute of Physics.",

author = "Tang, {P. J P} and Pullin, {M. J.} and Li, {Y. B.} and Phillips, {C. C.} and Stradling, {R. A.} and Chung, {S. J.} and Yuen, {W. T.} and L. Hart and Bain, {D. J.} and I. Galbraith",

year = "1996",

month = oct,

day = "21",

language = "English",

volume = "69",

pages = "2501--2503",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1-xSbx alloys

AU - Tang, P. J P

AU - Pullin, M. J.

AU - Li, Y. B.

AU - Phillips, C. C.

AU - Stradling, R. A.

AU - Chung, S. J.

AU - Yuen, W. T.

AU - Hart, L.

AU - Bain, D. J.

AU - Galbraith, I.

PY - 1996/10/21

Y1 - 1996/10/21

N2 - InAs/InAs0.865Sb0.135 quantum wells are characterized using magneto-photoluminescence. Band-to-band transitions are found at energies lower than the band gaps of either the InAs or the InAs0.865Sb0.135 with photoluminescence emission at wavelengths up to 4.8 µm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs. © 1996 American Institute of Physics.

AB - InAs/InAs0.865Sb0.135 quantum wells are characterized using magneto-photoluminescence. Band-to-band transitions are found at energies lower than the band gaps of either the InAs or the InAs0.865Sb0.135 with photoluminescence emission at wavelengths up to 4.8 µm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs. © 1996 American Institute of Physics.

UR - http://www.scopus.com/inward/record.url?scp=5644279124&partnerID=8YFLogxK

M3 - Article

SN - 1077-3118

VL - 69

SP - 2501

EP - 2503

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs_1-xSb_x alloys

Abstract

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