A high-sensitivity 135GHz millimeter-wave imager by differential transmission-line loaded split-ring-resonator in 65nm CMOS

Yang Shang*, Hao Yu, Chang Yang, Sanming Hu, Minkyu Je

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A high-sensitivity 135GHz millimeter-wave (mm-wave) imager is demonstrated in 65nm CMOS by on-chip meta-material resonator: a differential transmission-line (T-line) loaded with split-ring-resonator (DTL-SRR). Due to sharp stop-band introduced by metamaterial load, high-Q oscillatory amplification can be achieved with high sensitivity when utilizing DTL-SRR as quench-controlled oscillator to provide regenerative detection. The developed mm-wave imager pixel has a compact core chip area of 0.0085mm(2) with measured power consumption of 6.2mW, sensitivity of -76.8dBm, noise figure of 9.7dB, and noise equivalent power of 0.9fW/root H z with demonstrated mm-wave images.

Original languageEnglish
Title of host publicationProceedings of the 2014 44th European Solid-State Device Research Conference (ESSDERC 2014)
EditorsR Bez, P Pavan, G Meneghesso
Place of PublicationNew York
PublisherIEEE
Pages166-169
Number of pages4
DOIs
Publication statusPublished - 2014
Event44th European Solid-State Device Research Conference - , Italy
Duration: 22 Sept 201426 Sept 2014

Publication series

NameProceedings of the European Solid-State Device Research Conference
PublisherIEEE
ISSN (Print)1930-8876

Conference

Conference44th European Solid-State Device Research Conference
Abbreviated titleESSDERC
Country/TerritoryItaly
Period22/09/1426/09/14

Keywords

  • METAMATERIAL RESONATOR

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