Abstract
By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs. This explains the difference in their respective lasing mechanisms.
| Original language | English |
|---|---|
| Pages (from-to) | 667-671 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 159 |
| Issue number | 1-4 |
| Publication status | Published - Feb 1996 |