A comparison of lasing mechanisms in ZnSe and GaAs

I. Galbraith, S. W. Koch

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

By calculating the gain spectra for a variety of stimulated emission processes we compare and contrast the lasing mechanisms in ZnSe and GaAs. The calculated carrier density required for excitonic lasing lies beneath the Mott density in ZnSe but above the Mott density in GaAs. This explains the difference in their respective lasing mechanisms.

Original languageEnglish
Pages (from-to)667-671
Number of pages5
JournalJournal of Crystal Growth
Volume159
Issue number1-4
Publication statusPublished - Feb 1996

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    Galbraith, I., & Koch, S. W. (1996). A comparison of lasing mechanisms in ZnSe and GaAs. Journal of Crystal Growth, 159(1-4), 667-671.