980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth

Ying Ding, Wei Ji, Jingxiang Chen, Song Zhang, Xiaoling Wang, Huolei Wang, Haiqiao Ni, Jiaoqing Pan, Bifeng Cui, Maria Ana Cataluna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


This paper reports on the mode-locked operation of a 980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth. Optical pulses with 10-ps pulse duration were generated at a repetition rate of 955 MHz, with an average output power of 39.3 mW - which corresponds to a peak power of 4.1 W, generated directly from the oscillator. The RF spectrum displays a -3dB RF linewidth of only ∼40 Hz, as well as a 60-dB dynamic contrast, revealing the exceptionally low-noise fundamental mode-locked operation of this laser. At a repetition rate of ∼1 GHz, the highest peak power of 5.26 W was achieved, albeit with an increased -3dB RF linewidth of ∼100 Hz. The twosection chip incorporated an active region with a dual InGaAs quantum well sandwiched by an asymmetrical waveguide, and was operated at room temperature. By taking advantage of the broad tunability of the repetition rate which externalcavity lasers can afford, we also investigated the limits of stable fundamental mode-locked operation at the lowest repetition rates (or maximum external cavity lengths).

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers XII
EditorsAlexey A. Belyanin, Peter M. Smowton
Publication statusPublished - 2013
EventNovel In-Plane Semiconductor Lasers XII - San Francisco, CA, United States
Duration: 4 Feb 20137 Feb 2013

Publication series

NameProceedings of SPIE
ISSN (Print)0277-786X


ConferenceNovel In-Plane Semiconductor Lasers XII
Country/TerritoryUnited States
CitySan Francisco, CA


  • External-cavity
  • Mode-locked laser
  • Peak power
  • Quantum well
  • Repetition rate
  • RF linewidth
  • Tunability

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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