760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation

Huolei Wang, Liang Kong, David Bajek, Stephanie E. Haggett, Xiaoling Wang, Bifeng Cui, Jiaoqing Pan, Ying Ding, Maria Ana Cataluna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 9.4-GHz pulse train with a pulse duration of ~5 ps.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics
ISBN (Electronic)978-1-55752-973-2
DOIs
Publication statusPublished - 2013
Event2013 Conference on Lasers and Electro-Optics - San Jose, CA, United Kingdom
Duration: 9 Jun 201314 Jun 2013

Conference

Conference2013 Conference on Lasers and Electro-Optics
Abbreviated titleCLEO 2013
CountryUnited Kingdom
CitySan Jose, CA
Period9/06/1314/06/13

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of '760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation'. Together they form a unique fingerprint.

Cite this