70 nm resolution in subsurface optical imaging of silicon integrated-circuits using pupil-function engineering

K. A. Serrels, E. Ramsay, D. T. Reid

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We present experimental evidence for the resolution-enhancing effect of an annular pupil-plane aperture when performing nonlinear imaging in the vectorial-focusing regime through manipulation of the focal spot geometry. By acquiring two-photon optical beam-induced current images of a silicon integrated-circuit using solid-immersion-lens microscopy at 1550 nm we achieved 70 nm resolution. This result demonstrates a reduction in the minimum effective focal spot diameter of 36%. In addition, the annular-aperture-induced extension of the depth-of-focus causes an observable decrease in the depth contrast of the resulting image and we explain the origins of this using a simulation of the imaging process. © 2009 American Institute of Physics.

Original languageEnglish
Article number073113
JournalApplied Physics Letters
Volume94
Issue number7
DOIs
Publication statusPublished - 2009

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