50nm gate-length hydrogen terminated diamond field effect transistors characterization and inspection of operation

David A. J. Moran, Donald A. MacLaren, Samuele Porro, Richard Hill, Helen McLelland, Phillip John, John Wilson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hydrogen terminated diamond field effect transistors (FET) of 50nm gate length have been fabricated, their DC operation characterised and their physical and chemical structure inspected by Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS). DC characterisation of devices demonstrated pinch-off of the source-drain current can be maintained by the 50nm gate under low bias conditions. At larger bias, off-state output conductance increases, demonstrating most likely the onset of short-channel effects at this reduced gate length.

Original languageEnglish
Title of host publicationDiamond Electronics and Bioelectronics - Fundamentals to Applications IV
PublisherCambridge University Press
Pages141-147
Number of pages7
ISBN (Print)9781605112596
DOIs
Publication statusPublished - 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20103 Dec 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1282
ISSN (Print)0272-9172

Conference

Conference2010 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period29/11/103/12/10

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Moran, D. A. J., MacLaren, D. A., Porro, S., Hill, R., McLelland, H., John, P., & Wilson, J. (2011). 50nm gate-length hydrogen terminated diamond field effect transistors characterization and inspection of operation. In Diamond Electronics and Bioelectronics - Fundamentals to Applications IV (pp. 141-147). (Materials Research Society Symposium Proceedings; Vol. 1282). Cambridge University Press. https://doi.org/10.1557/opl.2011.455