5 Watt GaN HEMT Power Amplifier for LTE

Kyriaki Niotaki, Ana Collado, Apostolos Georgiadis, John Vardakas

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5 MHz to 20 MHz).

Original languageEnglish
Pages (from-to)338-344
Number of pages7
JournalRadioengineering
Volume23
Issue number1
Publication statusPublished - Apr 2014

Keywords

  • ACPR
  • GaN HEMT
  • linearity
  • LTE
  • PAPR
  • power amplifier
  • ENVELOPE

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