Abstract
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5 MHz to 20 MHz).
| Original language | English |
|---|---|
| Pages (from-to) | 338-344 |
| Number of pages | 7 |
| Journal | Radioengineering |
| Volume | 23 |
| Issue number | 1 |
| Publication status | Published - Apr 2014 |
Keywords
- ACPR
- GaN HEMT
- linearity
- LTE
- PAPR
- power amplifier
- ENVELOPE