4H-SiC npn power bipolar junction transistor

J. Wang, B. W. Williams

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The static and dynamic performance of the power silicon carbide BJT is investigated and compared with the silicon carbide UMOSFET by employing a numerical semiconductor simulator. The silicon carbide BJT exhibits superior current handling ability to and switching speed comparable with the SiC MOSFET in the voltage range simulated (1 kV-4 kV). The high current gain of the SiC BJT redresses the base drive problem of the silicon power BJT. It is proposed that research be carried out on the power silicon carbide NPN BJT, since it does not have the premature gate oxide breakdown and low inversion layer mobility problems associated with SiC MOSFET technology.

Original languageEnglish
Pages (from-to)1088-1097
Number of pages10
JournalSemiconductor Science and Technology
Volume14
Issue number12
DOIs
Publication statusPublished - Dec 1999

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