256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications

Istvan Gyongy, N. Calder, Amy Davies, Neale A. W. Dutton, Paul A. Dalgarno, Rory R. Duncan, Colin Rickman, R. K. Henderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of -160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting (IEDM)
PublisherIEEE
Pages8.2.1-8.2.4
Number of pages4
ISBN (Electronic)9781509039029
DOIs
Publication statusPublished - 2 Feb 2017
Event62nd IEEE International Electron Devices Meeting 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016

Publication series

NameTechnical digest
PublisherIEEE
ISSN (Print)2156-017X

Conference

Conference62nd IEEE International Electron Devices Meeting 2016
Abbreviated titleIEDM 2016
CountryUnited States
CitySan Francisco
Period3/12/167/12/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Gyongy, I., Calder, N., Davies, A., Dutton, N. A. W., Dalgarno, P. A., Duncan, R. R., Rickman, C., & Henderson, R. K. (2017). 256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications. In 2016 IEEE International Electron Devices Meeting (IEDM) (pp. 8.2.1-8.2.4). (Technical digest). IEEE. https://doi.org/10.1109/IEDM.2016.7838373