@inproceedings{6948bd7ab5d947fd815a72ba2f7c4135,
title = "256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications",
abstract = "A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of -160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.",
author = "Istvan Gyongy and N. Calder and Amy Davies and Dutton, {Neale A. W.} and Dalgarno, {Paul A.} and Duncan, {Rory R.} and Colin Rickman and Henderson, {R. K.}",
year = "2017",
month = feb,
day = "2",
doi = "10.1109/IEDM.2016.7838373",
language = "English",
series = "Technical digest",
publisher = "IEEE",
pages = "8.2.1--8.2.4",
booktitle = "2016 IEEE International Electron Devices Meeting (IEDM)",
address = "United States",
note = "62nd IEEE International Electron Devices Meeting 2016, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
}