Recently wireless power transfer (WPT) has received special attention due to the increasing need for autonomous devices to implement concepts such as the Internet of Things (IoT). This work deals with the design of a dual-band power amplifier for wireless power transfer. The ISM frequency bands of 2.4 GHz and 5.8 GHz were selected as they are typically used in far-field WPT systems. Among the available technologies for the design of circuits operating at the microwave and millimetre wave frequency bands stands the Substrate Integrated Waveguide (SIW) technology that combines the advantages of a bulky metallic waveguide such as low-losses and high isolation and microstrip technology such as ease of fabrication and reduced fabrication cost. This work combines the concept of Composite Right/Left-Handed (CRLH) unit cells and SIW technology for the implementation of an efficient power amplifier. A 10 W RF power GaN HEMT transistor from Cree was selected for the design. The simulated results showed a PAE of 55% and a gain of 14 dB at 2.4 GHz and a PAE of 36% and a gain of 9.7 dB at 5.8 GHz.
- Composite right/left-handed unit cells
- DualBand power amplifier
- GaN HEMT
- Substrate Integrated Waveguide
- Wireless power transfer
ASJC Scopus subject areas
- Electrical and Electronic Engineering