202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Ksenia A. Fedorova; Maria Ana Cataluna; Igor L. Krestnikov; Daniil A. Livshits; Edik U. Rafailov

doi:10.1109/ISLC.2010.5642655

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Ksenia A. Fedorova, Maria Ana Cataluna, Igor L. Krestnikov, Daniil A. Livshits, Edik U. Rafailov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

Original language	English
Title of host publication	2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages	172-173
Number of pages	2
ISBN (Electronic)	978-1-4244-5684-0
DOIs	https://doi.org/10.1109/ISLC.2010.5642655
Publication status	Published - 2010
Event	22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan Duration: 26 Sept 2010 → 30 Sept 2010

Conference

Conference	22nd IEEE International Semiconductor Laser Conference
Abbreviated title	ISLC 2010
Country/Territory	Japan
City	Kyoto
Period	26/09/10 → 30/09/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

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10.1109/ISLC.2010.5642655

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@inproceedings{7d4684ededf543b7b48932a9d64fac8b,

title = "202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser",

abstract = "Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.",

author = "Fedorova, {Ksenia A.} and Cataluna, {Maria Ana} and Krestnikov, {Igor L.} and Livshits, {Daniil A.} and Rafailov, {Edik U.}",

year = "2010",

doi = "10.1109/ISLC.2010.5642655",

language = "English",

isbn = "9781424456833",

pages = "172--173",

booktitle = "2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010",

note = "22nd IEEE International Semiconductor Laser Conference, ISLC 2010 ; Conference date: 26-09-2010 Through 30-09-2010",

}

Fedorova, KA, Cataluna, MA, Krestnikov, IL, Livshits, DA & Rafailov, EU 2010, 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. in 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010., 5642655, pp. 172-173, 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan, 26/09/10. https://doi.org/10.1109/ISLC.2010.5642655

TY - GEN

T1 - 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

AU - Fedorova, Ksenia A.

AU - Cataluna, Maria Ana

AU - Krestnikov, Igor L.

AU - Livshits, Daniil A.

AU - Rafailov, Edik U.

PY - 2010

Y1 - 2010

N2 - Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

AB - Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

UR - http://www.scopus.com/inward/record.url?scp=78651062896&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2010.5642655

DO - 10.1109/ISLC.2010.5642655

M3 - Conference contribution

AN - SCOPUS:78651062896

SN - 9781424456833

SP - 172

EP - 173

BT - 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010

T2 - 22nd IEEE International Semiconductor Laser Conference

Y2 - 26 September 2010 through 30 September 2010

ER -

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Abstract

Conference

ASJC Scopus subject areas

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