202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Ksenia A. Fedorova, Maria Ana Cataluna, Igor L. Krestnikov, Daniil A. Livshits, Edik U. Rafailov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

Original languageEnglish
Title of host publication2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages172-173
Number of pages2
ISBN (Electronic)978-1-4244-5684-0
DOIs
Publication statusPublished - 2010
Event22nd IEEE International Semiconductor Laser Conference - Kyoto, Japan
Duration: 26 Sep 201030 Sep 2010

Conference

Conference22nd IEEE International Semiconductor Laser Conference
Abbreviated titleISLC 2010
CountryJapan
CityKyoto
Period26/09/1030/09/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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