The ultrafast laser inscription technique has been used to fabricate channel waveguides in Tm3+-doped Lu2O3 ceramic gain medium for the first time to our knowledge. Laser operation has been demonstrated using a monolithic microchip cavity with a continuous-wave Ti:sapphire pump source at 796 nm. The maximum output power achieved from the Tm:Lu2O3 waveguide laser was 81 mW at 1942 nm. A maximum slope efficiency of 9.5% was measured with the laser thresholds observed to be in the range of 50-200 mW of absorbed pump power. Propagation losses for this waveguide structure are calculated to be 0.7 dB⋅cm−1 ± 0.3 dB⋅cm−1 at the lasing wavelength.
Morris, J., Stevenson, N. K., Bookey, H. T., Kar, A. K., Brown, C. T. A., Hopkins, J-M., Dawson, M. D., & Lagatsky, A. (2017). 1.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu2O3 ceramic. Optics Express, 25(13), 14910-14917. https://doi.org/10.1364/OE.25.014910