μ-PL characterization of CdSe quantum dots grown on a Zn 0.2Mg0.8S0.64Se0.36 barrier

I. A. Davidson; R. T. Moug; P. A. Dalgarno; C. Bradford; R. J. Warburton; K. A. Prior

doi:10.1088/1742-6596/245/1/012085

μ-PL characterization of CdSe quantum dots grown on a Zn _0.2Mg_0.8S_0.64Se_0.36 barrier

I. A. Davidson
, R. T. Moug
, P. A. Dalgarno
, C. Bradford
, R. J. Warburton
, K. A. Prior

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we report on the growth and characterisation of CdSe quantum dots grown by MBE on a MgS-rich ZnMgSSe barrier and characterized by 77K PL and 4K µ-PL. The dot density was estimated to be approximately 10¹⁰ cm^-2 however some emission lines were sufficiently well resolved to investigate their behaviour individually; their emission was observed to change both in intensity and energy, showing a high frequency random jittering. Correlation of the dot intensity over much longer time periods (~200s) was also observed. These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 IOP Publishing Ltd.

Original language	English
Article number	012085
Journal	Journal of Physics: Conference Series
Volume	244
DOIs	https://doi.org/10.1088/1742-6596/245/1/012085
Publication status	Published - 2010
Event	Quantum Dots 2010, QD2010 - Nottingham, United Kingdom Duration: 26 Apr 2010 → 30 Apr 2010

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title = "μ-PL characterization of CdSe quantum dots grown on a Zn 0.2Mg0.8S0.64Se0.36 barrier",

abstract = "In this paper we report on the growth and characterisation of CdSe quantum dots grown by MBE on a MgS-rich ZnMgSSe barrier and characterized by 77K PL and 4K µ-PL. The dot density was estimated to be approximately 1010 cm-2 however some emission lines were sufficiently well resolved to investigate their behaviour individually; their emission was observed to change both in intensity and energy, showing a high frequency random jittering. Correlation of the dot intensity over much longer time periods (\textasciitilde{}200s) was also observed. These results will be compared with previous results from CdSe dots grown on ZnSe barriers. {\textcopyright} 2010 IOP Publishing Ltd.",

author = "Davidson, \{I. A.\} and Moug, \{R. T.\} and Dalgarno, \{P. A.\} and C. Bradford and Warburton, \{R. J.\} and Prior, \{K. A.\}",

year = "2010",

doi = "10.1088/1742-6596/245/1/012085",

language = "English",

volume = "244",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

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note = "Quantum Dots 2010, QD2010 ; Conference date: 26-04-2010 Through 30-04-2010",

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TY - JOUR

T1 - μ-PL characterization of CdSe quantum dots grown on a Zn 0.2Mg0.8S0.64Se0.36 barrier

AU - Davidson, I. A.

AU - Moug, R. T.

AU - Dalgarno, P. A.

AU - Bradford, C.

AU - Warburton, R. J.

AU - Prior, K. A.

PY - 2010

Y1 - 2010

N2 - In this paper we report on the growth and characterisation of CdSe quantum dots grown by MBE on a MgS-rich ZnMgSSe barrier and characterized by 77K PL and 4K µ-PL. The dot density was estimated to be approximately 1010 cm-2 however some emission lines were sufficiently well resolved to investigate their behaviour individually; their emission was observed to change both in intensity and energy, showing a high frequency random jittering. Correlation of the dot intensity over much longer time periods (~200s) was also observed. These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 IOP Publishing Ltd.

AB - In this paper we report on the growth and characterisation of CdSe quantum dots grown by MBE on a MgS-rich ZnMgSSe barrier and characterized by 77K PL and 4K µ-PL. The dot density was estimated to be approximately 1010 cm-2 however some emission lines were sufficiently well resolved to investigate their behaviour individually; their emission was observed to change both in intensity and energy, showing a high frequency random jittering. Correlation of the dot intensity over much longer time periods (~200s) was also observed. These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 IOP Publishing Ltd.

UR - https://www.scopus.com/pages/publications/78651238523

U2 - 10.1088/1742-6596/245/1/012085

DO - 10.1088/1742-6596/245/1/012085

M3 - Article

SN - 1742-6588

VL - 244

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

M1 - 012085

T2 - Quantum Dots 2010, QD2010

Y2 - 26 April 2010 through 30 April 2010

ER -

μ-PL characterization of CdSe quantum dots grown on a Zn _0.2Mg_0.8S_0.64Se_0.36 barrier

Abstract

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