μ-PL characterization of CdSe quantum dots grown on a Zn 0.2Mg0.8S0.64Se0.36 barrier

I. A. Davidson, R. T. Moug, P. A. Dalgarno, C. Bradford, R. J. Warburton, K. A. Prior

Research output: Contribution to journalArticle

Abstract

In this paper we report on the growth and characterisation of CdSe quantum dots grown by MBE on a MgS-rich ZnMgSSe barrier and characterized by 77K PL and 4K µ-PL. The dot density was estimated to be approximately 1010 cm-2 however some emission lines were sufficiently well resolved to investigate their behaviour individually; their emission was observed to change both in intensity and energy, showing a high frequency random jittering. Correlation of the dot intensity over much longer time periods (~200s) was also observed. These results will be compared with previous results from CdSe dots grown on ZnSe barriers. © 2010 IOP Publishing Ltd.

Original languageEnglish
Article number012085
JournalJournal of Physics: Conference Series
Volume244
DOIs
Publication statusPublished - 2010
EventQuantum Dots 2010, QD2010 - Nottingham, United Kingdom
Duration: 26 Apr 201030 Apr 2010

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