Γ-X-Γ electron transfer in mixed type I-type II GaAs/AlAs quantum well structures

J. Feldmann, M. Preis, E. O. Göbel, P. Dawson, C. T. Foxon, I. Galbraith

Research output: Contribution to journalArticle

Abstract

We have studied the relaxation dynamics of photoexcited electrons in a mixed type I-type II GaAs/AlAs quantum well structure. The spatial electron-hole separation via a G-X-G electron transfer is detected in a time-resolved, non-degenerate pump and probe experiment. The time-constant for the spatial G-X-G electron transfer is determined to about 30 ps and is governed by the low density of final G states. © 1992.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalSolid State Communications
Volume83
Issue number3
Publication statusPublished - Jul 1992

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    Feldmann, J., Preis, M., Göbel, E. O., Dawson, P., Foxon, C. T., & Galbraith, I. (1992). Γ-X-Γ electron transfer in mixed type I-type II GaAs/AlAs quantum well structures. Solid State Communications, 83(3), 245-248.