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Personal profile

Biography

Dr Xin Yi was born in Chongqing, China in 1991. He joined Heriot-Watt University in January 2020 as Research Associate. Dr Yi is currently Research Fellow funded by the EPSRC to design next-generation quantum detectors for emerging quantum technology applications. Prior to moving to Heriot-Watt University, he received his Bachelor degree in Electronic and Electrical Engineering at The University of Sheffield in 2015 and obtained his PhD at the same university working on Antimony based avalanche photodiodes (APDs) in 2020. 

 

Research interests

Quantum detectors are capable of detecting an individual quantum of light and are a critical component in a wide range of quantum technology applications.

The ultimate goal of his research is to demonstrate next-generation avalanche photodiodes and single-photon avalanche diodes that can be operated beyond the spectral range of Silicon into the short-wave infrared region (1400 – 3000 nm). His general research interests are

  1. Understanding of impact ionization and avalanche breakdown in different semiconductor materials and device structures
  2. Characterisation of III-V, particularly that containing Antinomy, and Group IV semiconductor materials and devices.
  3. Design, simulation, and fabrication of novel avalanche photodiodes and single-photon avalanche diodes.
  4. Examining novel quantum detectors in emerging applications.

 

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