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Research Output 2005 2019

  • 42 Article
  • 14 Conference contribution
  • 1 Comment/debate
2018

Experimental up-scaling of thermal conductivity reductions in silicon by vacancy-engineering: From the nano- to the micro-scale

Wight, N. M. & Bennett, N. S., 22 May 2018, In : Materials Today: Proceedings. 5, 4, Part 1, p. 10211-10217

Research output: Contribution to journalArticle

Manufacture of glass and mirrors from lunar regolith simulant

Schleppi, J., Gibbons, J., Groetsch, A., Buckman, J., Cowley, A. & Bennett, N., 19 Nov 2018, In : Journal of Materials Science. p. 1-22 22 p.

Research output: Contribution to journalArticle

Open Access
File
Glass
Microwave ovens
Moon
Polishing
Aluminum
2017

A universal method for thermal conductivity measurements on micro-/nano-films with and without substrates using micro-Raman spectroscopy

Wight, N. M., Acosta, E., Vijayaraghavan, R. K., McNally, P. J., Smirnov, V. & Bennett, N. S., Sep 2017, In : Thermal Science and Engineering Progress. 3, p. 95-101 7 p.

Research output: Contribution to journalArticle

Raman spectroscopy
Thermal conductivity
Substrates
Design of experiments
Analytical models

Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics

Acosta, E., Wight, N., Smirnov, V., Buckman, J. & Bennett, N., 30 Nov 2017, In : Journal of Electronic Materials. p. 1-8

Research output: Contribution to journalArticle

Open Access
File
silicon
thin films
Seebeck effect
carrier mobility
penetration
Silicon
Doping (additives)
silicon
Seebeck effect
Seebeck coefficient
2016

B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages

Cowley, A., Ivankovic, A., Wong, C. S., Bennett, N., Danilewsky, A. N., Gonzalez, M., Cherman, V., Vandevelde, B., De Wolf, I. & McNally, P. J., Apr 2016, In : Microelectronics Reliability. 59, p. 108-116 9 p.

Research output: Contribution to journalArticle

warpage
Ball grid arrays
splines
Splines
balls

Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers

Bennett, N. S., Byrne, D., Cowley, A. & Neophytou, N., 24 Oct 2016, In : Applied Physics Letters. 109, 17, 173905

Research output: Contribution to journalArticle

Open Access
File
augmentation
silicon
defects
Seebeck effect
carrier mobility

Facile hydrothermal synthesis of economically viable VO2(M1) counter electrode for dye sensitized solar cells

Mutta, G. R., Popuri, S. R., Vasundhara, M., Maciejczyk, M., Racu, A. V., Banica, R., Robertson, N., Wilson, J. I. B. & Bennett, N. S., Nov 2016, In : Materials Research Bulletin. 83, p. 135–140 6 p.

Research output: Contribution to journalArticle

Open Access
File
Hydrothermal synthesis
Electrodes
Costs
Redox reactions
Reducing Agents

Large thermoelectric power factors and impact of texturing on the thermal conductivity in polycrystalline SnSe

Popuri, S., Pollet, M., Decourt, R., Morrison, F. D., Bennett, N. & Bos, J-W. G., 28 Feb 2016, In : Journal of Materials Chemistry C. 4, 8, p. 1685-1691 7 p.

Research output: Contribution to journalArticle

Open Access
File
ingots
thermal conductivity
pressing
platelets
single crystals

Positron probing of disordered regions in neutron-irradiated silicon

Arutyunov, N., Bennett, N., Wight, N., Krause-Rehberg, R., Emtsev, V., Abrosimov, N. & Kozlovski, V., Nov 2016, In : Physica Status Solidi B - Basic Research. 253, 11, p. 2175-2179 5 p.

Research output: Contribution to journalArticle

Positrons
Silicon
Vacancies
positrons
Neutrons
Open Access
File
Depth profiling
Secondary ion mass spectrometry
Arsenic
arsenic
secondary ion mass spectrometry

Sol-gel spin coated well adhered MoO3 thin films as an alternative counter electrode for dye sensitized solar cells

Mutta, G. R., Popuri, S. R., Wilson, J. I. B. & Bennett, N. S., Nov 2016, In : Solid State Sciences. 61, p. 84-88 5 p.

Research output: Contribution to journalArticle

Open Access
File
Sol-gels
counters
solar cells
dyes
gels

The role of annealing conditions on the low temperature photoluminescence properties of CuAlO2

Byrne, D., Bennett, N. & Cowley, A., Feb 2016, In : Journal of Luminescence. 170, Part 1, p. 212-218 7 p.

Research output: Contribution to journalArticle

metastable state
Photoluminescence
Annealing
photoluminescence
Temperature

V2O5 as an inexpensive counter electrode for dye sensitized solar cells

Mutta, G. R., Popuri, S., Maciejczyk, M., Robertson, N., Vasundhara, M., Wilson, J. I. B. & Bennett, N., Mar 2016, In : Materials Research Express. 3, 3, 035501

Research output: Contribution to journalArticle

Electrodes
Platinum
Costs
Innovation
Dye-sensitized solar cells
2015

Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)]

Cowern, N. E. B., Simdyankin, S., Goss, J. P., Napolitani, E., De Salvador, D., Bruno, E., Mirabella, S., Ahn, C. & Bennett, N. S., Sep 2015, In : Applied Physics Reviews. 2, 3, 036101

Research output: Contribution to journalComment/debate

Open Access
File
germanium
interstitials
proton irradiation
stems
markers

Efficient thermoelectric performance in silicon nano-films by vacancy-engineering

Bennett, N. S., Wight, N. M., Popuri, S. R. & Bos, J. W. G., 1 Sep 2015, In : Nano Energy. 16, p. 350-356 7 p.

Research output: Contribution to journalArticle

Open Access
File
Silicon
Vacancies
Seebeck coefficient
Ultrathin films
Crystal lattices

Enhanced Seebeck coefficient in silicon nanowires containing dislocations

Bennett, N. S., Byrne, D. & Cowley, A., 2015, In : Applied Physics Letters. 107, 1, 013903

Research output: Contribution to journalArticle

Open Access
File
Seebeck effect
nanowires
thermoelectric materials
silicon
defects

Geothermal energy from abandoned oil and gas wells using water in combination with a closed wellbore

Wight, N. M. & Bennett, N. S., 5 Oct 2015, In : Applied Thermal Engineering. 89, p. 908-915 8 p.

Research output: Contribution to journalArticle

Geothermal energy
Abandoned wells
Fluids
Gases
Water

Reduced thermal conductivity in silicon thin-films via vacancies

Wight, N. & Bennett, N., 2015, Gettering and Defect Engineering in Semiconductor Technology XVI. Trans Tech Publications, Vol. 242, p. 344-349 6 p. (Solid State Phenomena; vol. 242)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Vacancies
Thermal conductivity
thermal conductivity
bismuth tellurides
2014

Development of B-spline X-ray Diffraction Imaging techniques for die warpage and stress monitoring inside fully encapsulated packaged chips

Wong, C. S., Ivankovic, A., Bennett, N., Cowley, A., Danilewsky, A. N., Gonzalez, M., Cherman, V., Vandevelde, B., De Wolf, I. & McNally, P. J., 2014, 2014 IEEE 64th Electronic Components and Technology Conference (ECTC). IEEE, p. 1517-1522 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Splines
Imaging techniques
X ray diffraction
Monitoring
Semiconductor materials

Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon

Alzanki, T., Bennett, N., Gwilliam, R., Jeynes, C., Bailey, P., Noakes, T. & Sealy, B., Mar 2014, In : Journal of Engineering Research. 2, 1, p. 121-132 12 p.

Research output: Contribution to journalArticle

Non-destructive laboratory-based X-ray diffraction mapping of warpage in Si die embedded in IC packages

Wong, C. S., Bennett, N. S., Manessis, D., Danilewsky, A. & McNally, P. J., 1 Apr 2014, In : Microelectronic Engineering. 117, p. 48-56 9 p.

Research output: Contribution to journalArticle

Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs

Bennett, N. S., Cherkaoui, K., Wong, C. S., O'Connor, E., Monaghan, S., Hurley, P., Chauhan, L. & McNally, P. J., 31 Oct 2014, In : Thin Solid Films. 569, p. 104-112 9 p.

Research output: Contribution to journalArticle

The luminescent properties of CuAlO2

Byrne, D., Cowley, A., Bennett, N. & McGlynn, E., 4 Aug 2014, In : Journal of Materials Chemistry C. 2, 37, p. 7859-7868 10 p.

Research output: Contribution to journalArticle

2013

Extended Point Defects in Crystalline Materials: Ge and Si

Cowern, N. E. B., Simdyankin, S., Ahn, C., Bennett, N. S., Goss, J. P., Hartmann, J., Pakfar, A., Hamm, S., Valentin, J., Napolitani, E., De Salvador, D., Bruno, E. & Mirabella, S., 8 Apr 2013, In : Physical Review Letters. 110, 15, 5 p., 155501

Research output: Contribution to journalArticle

Open Access
File

Strain characterization of directly bonded germanium-to-silicon substrates

Ferain, I., Bennett, N. S., McNally, P., Holl, S. & Colinge, C., 2013, ECS Transactions. Goorsky, M. S., Colinge, C., Knechtel, R., Baumgart, H., Hobart, K., Moriceau, H. & Suga, T. (eds.). 7 ed. Vol. 50, p. 77-83 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Synchrotrons
Germanium
Topography
Nucleation
X rays
2012

A novel X-ray diffraction technique for analysis of die stress inside fully encapsulated packaged chips

Wong, C. S., Bennett, N., Allen, D., Danilewsky, A. & McNally, P., 2012, 2012 4th Electronic System-Integration Technology Conference (ESTC), 2012. IEEE, 6542095

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thermal stress
X ray diffraction
Full width at half maximum
Thermal expansion
Integrated circuits

Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique

Bennett, N. S. & Cowern, N. E. B., 24 Apr 2012, In : Applied Physics Letters. 100, 17, 4 p., 172106

Research output: Contribution to journalArticle

Open Access
File

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques

Wong, C. S., Bennett, N. S., Galiana, B., Tejedor, P., Benedicto, M., Molina-Aldareguia, J. M. & McNally, P. J., Nov 2012, In : Semiconductor Science and Technology. 27, 11, 7 p., 115012

Research output: Contribution to journalArticle

2011

Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Byun, K. Y., Fleming, P., Bennett, N., Gity, F., McNally, P., Morris, M., Ferain, I. & Colinge, C., 15 Jun 2011, In : Journal of Applied Physics. 109, 12, 5 p., 123529

Research output: Contribution to journalArticle

Open Access
File

Multi-technique characterisation of MOVPE-grown GaAs on Si

Wong, C. S., Bennett, N. S., McNally, P. J., Galiana, B., Tejedor, P., Benedicto, M., Molina-Aldareguia, J. M., Monaghan, S., Hurley, P. K. & Cherkaoui, K., Apr 2011, In : Microelectronic Engineering. 88, 4, p. 472-475 4 p.

Research output: Contribution to journalArticle

Non-destructive X-Ray mapping of strain & warpage of die in packaged chips

Stopford, J., Henry, A., Manessis, D., Bennett, N., Horan, K., Allen, D., Wittge, J., Boettcher, L., Cowley, A. & McNally, P., 2011, 18th European Microelectronics and Packaging Conference (EMPC), 2011 . IEEE, 6142359

Research output: Chapter in Book/Report/Conference proceedingConference contribution

X rays
Electroplating
Delamination
Semiconductor materials
Feedback
2010

Overlayer stress effects on defect formation in Si and Ge

Cowern, N. E. B., Bennett, N. S., Ahn, C., Yoon, J. C., Hamm, S., Lerch, W., Kheyrandish, H., Cristiano, F. & Pakfar, A., 26 Feb 2010, In : Thin Solid Films. 518, 9, p. 2442-2447 6 p.

Research output: Contribution to journalArticle

Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Petersen, D. H., Hansen, O., Hansen, T. M., Boggild, P., Lin, R., Kjaer, D., Nielsen, P. F., Clarysse, T., Vandervorst, W., Rosseel, E., Bennett, N. S. & Cowern, N. E. B., Jan 2010, In : Journal Vacuum Science and Technology B. 28, 1, p. C1C27-C1C33 7 p.

Research output: Contribution to journalArticle

Transfer of physically-based models from process to device simulations: Application to advanced strained Si/SiGe MOSFETs

Bazizi, E. M., Fazzini, P. F., Cristiano, F., Pakfar, A., Tavernier, C., Payet, F., Skotnicki, T., Zechner, C., Zographos, N., Matveev, D., Cowern, N. E. B., Bennett, N., Ahn, C. & Yoon, J. C., 2010, 2010 IEEE International Electron Devices Meeting (IEDM). p. 15.1.1-15.1.4

Research output: Chapter in Book/Report/Conference proceedingConference contribution

field effect transistors
Doping (additives)
Defects
Amorphization
Ion implantation
2009

Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

Bennett, N. S., Cowern, N. E. B. & Sealy, B. J., 26 Jun 2009, In : Applied Physics Letters. 94, 25, 3 p., 252109

Research output: Contribution to journalArticle

Review of stress effects on dopant solubility in silicon and silicongermanium layers

Bennett, N. S., Ahn, C., Cowern, N. E. B. & Pichler, P., Oct 2009, In : Solid State Phenomena. 156-158, p. 173-180 8 p.

Research output: Contribution to journalArticle

Silicon
solubility
Solubility
Doping (additives)
Germanium

Transient activation model for antimony in relaxed and strained silicon

Lai, Y., Bennett, N. S., Ahn, C., Cowern, N. E. B., Cordero, N. & Greer, J. C., Nov 2009, In : Solid-State Electronics. 53, 11, p. 1173-1176 4 p.

Research output: Contribution to journalArticle

2008

Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: a superior dopant to arsenic?

Bennett, N. S., Smith, A. J., Gwilliam, R. M., Webb, R. P., Sealy, B. J., Cowern, N. E. B., O'Reilly, L. & McNally, P. J., Jan 2008, In : Journal Vacuum Science and Technology B. 26, 1, p. 391-395 5 p.

Research output: Contribution to journalArticle

Constraints on micro-Raman strain metrology for highly doped strained Si materials

O'Reilly, L., Horan, K., McNally, P. J., Bennett, N. S., Cowern, N. E. B., Lankinen, A., Sealy, B. J., Gwilliam, R. M., Noakes, T. C. Q. & Bailey, P., 9 Jun 2008, In : Applied Physics Letters. 92, 23, 3 p., 233506

Research output: Contribution to journalArticle

Differential Hall characterisation of ultrashallow doping in advanced Si-based materials

Bennett, N. S., Cowern, N. E. B., Smith, A. J., Kah, M., Gwilliam, R. M., Sealy, B. J., Noakes, T. C. Q., Bailey, P., Giubertoni, D. & Bersani, M., 5 Dec 2008, In : Materials Science and Engineering: B. 154-155, p. 229-233 5 p.

Research output: Contribution to journalArticle

Doping of sub-50nm SOI layers

Pawlak, B. J., Duffy, R., van Dal, M., Voogt, F., Weemaes, R., Roozeboom, F., Zalm, P., Bennett, N. & Cowern, N. E. B., 2008, Doping Engineering for Front-End Processing: Symposium E. Materials Research Society, p. 169-175 7 p. (MRS Proceedings; vol. 1070)

Research output: Chapter in Book/Report/Conference proceedingConference contribution

thin bodies
isolators
fins
Silicon
Doping (additives)

Enhanced n-type dopant solubility in tensile-strained Si

Bennett, N., Radamson, H. H., Beer, C. S., Smith, A. J., Gwilliam, R. M., Cowern, N. E. B. & Sealy, B. J., 3 Nov 2008, In : Thin Solid Films. 517, 1, p. 331-333 3 p.

Research output: Contribution to journalArticle

solubility
Solubility
Doping (additives)
activation
electron mobility

Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions

Rosseel, E., Vandervorst, W., Clarysse, T., Goossens, J., Moussa, A., Lin, R., Petersen, D. H., Nielsen, P. F., Hansen, O., Bennett, N. & Cowern, N. E. B., 2008, 2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors. p. 135-140 6 p. 4690547

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sheet resistance
Boron
Chemical activation
Lasers
Laser beams

On the analysis of the activation mechanisms of sub-melt laser anneals

Clarysse, T., Bogdanowicz, J., Goossens, J., Moussa, A., Rosseel, E., Vandervorst, W., Petersen, D. H., Lin, R., Nielsen, P. F., Hansen, O., Merklin, G., Bennett, N. S. & Cowern, N. E. B., 5 Dec 2008, In : Materials Science and Engineering: B. 154-155, p. 24-30 7 p.

Research output: Contribution to journalArticle

Raman scattering studies of ultrashallow Sb implants in strained Si

O'Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., Cowern, N. E. B., Lankinen, A. & Tuomi, T. O., 1 Apr 2008, In : Journal of Materials Science: Materials in Electronics. 19, 4, p. 305-309 5 p.

Research output: Contribution to journalArticle

Structural and electrical characterisation of ion-implanted strained silicon

Horan, K., Lankinen, A., O'Reilly, L., Bennett, N. S., McNally, P. J., Sealy, B. J., Cowern, N. E. B. & Tuomi, T. O., 5 Dec 2008, In : Materials Science and Engineering: B. 154-155, p. 118-121 4 p.

Research output: Contribution to journalArticle

Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon

Bennett, N. S., Cowern, N. E. B., Paul, S., Lerch, W., Kheyrandish, H., Smith, A. J., Gwilliam, R. M. & Seal, B. J., 2008, 38th European Solid-State Device Research Conference, 2008. Hall, S. & Walton, A. (eds.). IEEE, p. 290-293 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution