High-performance AlAs0.56Sb0.44 avalanche photodiodes

Activity: Talk or presentationInvited talk


AlAs0.56Sb0.44 is a promising avalanche material which can be grown lattice-matched to InP and therefore use InGaAs as the absorption region in a Separate Absorption and Multiplication APD (SAM-APD). The electron and hole ionisation coefficients in this material are very dissimilar and our experiments show that this leads to AlAs0.56Sb0.44 having the lowest excess noise performance of any InP based material system (F = 2.2 at M = 40) reported to date. Simulations suggest that operation at 1550 nm and 25 GB s-1 with a sensitivity of -25.7 dBm is possible in a normal incidence SAM-APD.
Event titleSPIE OPTO 2020
Event typeConference
SponsorThe International Society for Optical Engineering
LocationSan Francisco, United StatesShow on map
Degree of RecognitionInternational