Design, fabrication and performance of planar Ge-on-Si single-photon avalanche diode at 1550 nm

Activity: Talk or presentationOral presentation


Semiconductor based single-photon avalanche diode (SPAD) detectors are widely used in quantum technology applications, which focus on the arrival time of single photons. Using germanium as the absorption region in a Separate Absorption and Multiplication design solves the operating limitation beyond the spectrum range of silicon, i.e. typically at a wavelength of ~ 1000 nm. Our first-generation planar geometry Ge-on-Si single-photon avalanche diodes utilised a 1000 nm Germanium absorption region and showed extremely low noise-equivalent-power of 7.7 × 10−17 WHz−½ at a wavelength of 1310 nm. We demonstrate new structures designed to achieve high single-photon detection efficiency at a wavelength of 1550 nm.
Period6 Dec 2022
Event titleSPIE Security + Defence 2022
Event typeConference
LocationBerlin, GermanyShow on map
Degree of RecognitionInternational